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| Ordering number : ENA0559 VEC2815 SANYO Semiconductors DATA SHEET VEC2815 Features * * MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications * * DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 3 20 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit --30 20 --3 --12 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : CL Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2906PE TI IM TC-00000344 No.A0559-1/6 VEC2815 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=2mA IF=3A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 90 20 30 0.37 0.42 1.4 V V mA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--1.5A, VGS=-10V ID=--0.7A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A IS=--3A, VGS=0V --30 --1 10 --1.0 2.0 3.4 65 117 510 115 78 11 17 53 35 11 2.4 1.7 --0.87 --1.2 86 168 --2.4 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7012-004 Electrical Connection 8 7 6 5 0.3 0.15 8 7 65 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 2.8 2.3 0.25 0.25 1 2 2.9 3 0.65 4 1 2 3 4 0.75 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 0.07 No.A0559-2/6 VEC2815 Switching Time Test Circuit [MOSFET] VIN 0V --10V VIN ID= --1.5A RL=10 50 10s --5V 100 10 trr Test Circuit [SBD] VDD= --15V Duty10% 100mA D PW=10s D.C.1% VOUT G 100mA trr VEC2815 P.G 50 S --4.0 ID -- VDS V --5. 0 [MOSFET] --5 ID -- VGS VDS= --10V [MOSFET] --4 . --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 0V Drain Current, ID -- A --6. 0 V --4 Drain Current, ID -- A --8. 0 V --3 --10 VGS= --2.5V V --2 Ta= 7 --1 5C 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 220 Drain-to-Source Voltage, VDS -- V IT07767 [MOSFET] RDS(on) -- VGS Ta=25C 220 Gate-to-Source Voltage, VGS -- V IT07768 [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 180 160 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 180 160 140 120 100 80 60 40 20 --75 --50 --25 0 25 50 75 100 125 150 175 ID= --1.5A 140 --0.7A 120 100 80 60 40 0 --2 --4 --6 --8 --10 --12 IT07769 G A, V 0.7 = -ID --4V S= , VG 1.5A I D= -- --10 S= V Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- C 25 IT09169 C --25 C No.A0559-3/6 10mA VEC2815 10 yfs -- ID [MOSFET] VDS= --10V --10 7 5 3 2 IS -- VSD VGS=0V [MOSFET] Forward Transfer Admittance, yfs -- S 7 5 3 2 Ta= C 75 1.0 C 25 --0.1 7 5 3 2 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.01 7 5 3 2 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.001 --0.3 Drain Current, ID -- A 2 100 IT07771 SW Time -- ID td(off) tf [MOSFET] 1000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Ta= 75 C 25 C --25 C C --25 Source Current, IS -- A --1.0 7 5 3 2 IT07772 VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF [MOSFET] f=1MHz Switching Time, SW Time -- ns 7 5 3 2 3 2 td(on) 10 7 5 3 2 1.0 --0.1 tr 100 7 5 3 2 Coss Crss 2 3 5 7 --1.0 2 3 5 7 0 --5 --10 --15 --20 --25 --30 Drain Current, ID -- A --10 --9 IT07773 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT07774 ASO [MOSFET] IDP= --12A ID= --3A PW10s 1m s --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 IT07775 10 m 10 s DC 0m s op er ati on Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 --0.01 --0.01 Total Gate Charge, Qg -- nC 1.0 Drain-to-Source Voltage, VDS -- V IT09302 PD -- Ta M ou nt ed [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 on 0.6 ac er am ic bo ar d 0.4 0.2 (9 00 m m2 0. 8m m )1 un it 100 120 140 160 0 0 20 40 60 80 Ambient Temperature, Ta -- C IT09303 No.A0559-4/6 VEC2815 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 IT09872 IF -- VF 1000k IR -- VR Ta=125C 100C 75C 100k Reverse Current, IR -- A Forward Current, IF -- A 10 0 C 10k 50C 1k Ta= 125 C 75 C 50 C 25 C 0C 25C 100 --25 C 0C --25C 10 1.0 0.1 0 5 10 15 20 25 30 35 IT09873 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 1.8 1.6 1.4 1.2 1.0 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO (1) Reverse Voltage, VR -- V 0.016 0.014 0.012 0.010 0.008 PR(AV) -- VR Rectangular wave 360 (2) (4) (3) (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave V 360 R 180 VR 360 (1) (2) (3) Sine wave 180 0.8 0.6 0.4 0.2 0 0 360 Sine wave 0.006 0.004 0.002 0 0 5 10 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT09874 (4) 15 20 25 30 35 IT10607 Average Output Current, IO -- A 140 Tc -- IO Average Reverse Voltage, VR -- V 24 IFSM -- t IS 120 Surge Forward Current, IFSM(Peak) -- A Case Temperature, Tc -- C (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Current waveform 50Hz sine wave 20 100 16 20ms t 80 *When mounted in reliability operaion board, Rth(J-a)=50C/W 60 12 Rectangular wave 40 360 8 20 0 0 Sine wave 180 360 0.5 1.0 1.5 2.0 (1) (2) (4) (3) 4 0 2.5 3.0 3.5 IT10608 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Average Output Current, IO -- A 7 5 Time, t -- s ID00523 C -- VR Interterminal Capacitance, C -- pF 3 2 100 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Reverse Voltage, VR -- V IT09871 No.A0559-5/6 VEC2815 Note on usage : Since the VEC2815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No.A0559-6/6 |
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